| 1 |
Resistive switching effect and charge conduction mechanisms in Y-0.95 Sr-0.05 MnO3 manganites: Dynamic role of defects
Hirpara B, Gadani K, Sagapariya K, Gohil H, Sanghvi D, Joshi AD, Asokan K, Solanki PS, Shah NA
Thin Solid Films, 685, 151, 2019 |
| 2 |
Fabrication of transparent bistable switching memory device using plasmapolymerized hexamethyldisiloxane layers with embedded graphene quantum dots
Ooi PC, Wee MFMR, Dee CF, Yap CC, Salleh MM, Majlis BY
Thin Solid Films, 645, 45, 2018 |
| 3 |
Effects of FeCl3 as Oxidizing Agent on the Conduction Mechanisms in Polypyrrole (PPy)/pc-ZnO Hybrid Heterojunctions Grown by Oxidative Chemical Vapor Deposition
Castro-Carranza A, Nolasco JC, Bley S, Ruckmann M, Meierhofer F, Madler L, Voss T, Gutowski J
Journal of Polymer Science Part B: Polymer Physics, 54(15), 1537, 2016 |
| 4 |
Schottky-Richardson, Poole-Frenkel, and Space Charge Limited Current Mechanisms in M-Type Sr(MnTi)(x)Fe(12-2x)O19 Ferrite
Singh C, Narang SB, Jaroszewski M, Bhikan V, Kaur P
Journal of the American Ceramic Society, 99(11), 3639, 2016 |
| 5 |
A comparative study of charge trapping in HfO2/Al2O3 and ZrO2/Al2O3 based multilayered metal/high-k/oxide/Si structures
Spassov D, Skeparovski A, Paskaleva A, Novkovski N
Thin Solid Films, 614, 7, 2016 |
| 6 |
Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures
Jin CJ, Lu HL, Zhang YM, Guan H, Li Z, Zhang YM
Thin Solid Films, 619, 48, 2016 |
| 7 |
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Balaram N, Reddy MSP, Reddy VR, Park C
Thin Solid Films, 619, 231, 2016 |
| 8 |
Memory programming of TiO2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching
Bousoulasa P, Giannopoulos J, Giannakopoulos K, Dimitrakis P, Tsoukalas D
Applied Surface Science, 332, 55, 2015 |
| 9 |
Temperature dependence of the conduction mechanisms through a Pb(Zr,Ti)O-3 thin film
Jegou C, Michalas L, Maroutian T, Agnus G, Koutsoureli M, Papaioannou G, Largeau L, Troadec D, Leuliet A, Aubert P, Lecoeur P
Thin Solid Films, 563, 32, 2014 |
| 10 |
Influence of Ti top electrode thickness on the resistive switching properties of forming free and self-rectified TiO2 (-) (x) thin films
Bousoulas P, Michelakaki I, Tsoukalas D
Thin Solid Films, 571, 23, 2014 |
