화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Evaluation of the optical properties of epitaxial lateral overgrown gallium nitride on sapphire and the role of optically active metastable defects using cathodoluminescence and photoluminescence spectroscopy
Ryan BJ, Lowney DP, Henry MO, McNally PJ, McGlynn E, Jacobs K, Considine L
Thin Solid Films, 473(2), 308, 2005
2 GaN/InGaN quantum wells grown in a close coupled showerhead reactor
Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG, Considine L, Humphreys CJ
Journal of Crystal Growth, 248, 518, 2003
3 Chemical mapping of InGaN MQWs
Sharma N, Tricker D, Thomas P, Bougrioua Z, Jacobs K, Cheyns J, Moerman I, Thrush T, Considine L, Boyd A, Humphreys C
Journal of Crystal Growth, 230(3-4), 438, 2001
4 Material optimisation for AlGaN/GaN HFET applications
Bougrioua Z, Moerman I, Sharma N, Wallis RH, Cheyns J, Jacobs K, Thrush EJ, Considine L, Beanland R, Farvacque JL, Humphreys C
Journal of Crystal Growth, 230(3-4), 573, 2001
5 Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Stafford A, Irvine SJC, Bougrioua Z, Jacobs K, Moerman I, Thrush EJ, Considine L
Journal of Crystal Growth, 221, 142, 2000