검색결과 : 29건
| No. | Article |
|---|---|
| 1 |
Selective AuCl3 doping of graphene for reducing contact resistance of graphene devices Choi DC, Kim M, Song YJ, Hussain S, Song WS, An KS, Jung J Applied Surface Science, 427, 48, 2018 |
| 2 |
Effect of silicon oxide thickness on polysilicon based passivated contacts for high-efficiency crystalline silicon solar cells Kale AS, Nemeth W, Harvey SP, Page M, Young DL, Agarwal S, Stradins P Solar Energy Materials and Solar Cells, 185, 270, 2018 |
| 3 |
Phosphorus diffused LPCVD polysilicon passivated contacts with in-situ low pressure oxidation Fong KC, Kho TC, Liang WS, Chong TK, Ernst M, Walter D, Stocks M, Franklin E, McIntosh K, Blakers A Solar Energy Materials and Solar Cells, 186, 236, 2018 |
| 4 |
Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films Nogay G, Stuckelberger J, Wyss P, Rucavado E, Allebe C, Koida T, Morales-Masis M, Despeisse M, Haug FJ, Loper P, Ballif C Solar Energy Materials and Solar Cells, 173, 18, 2017 |
| 5 |
Forming aluminum electrodes by screen printing and electron-beam evaporation for high performance interdigitated back contact solar cells Chen YZ, Yang Y, Zhang XL, Xu GC, Marmon JK, Li ZL, Feng ZQ, Verlinden PJ, Shen H Solar Energy Materials and Solar Cells, 143, 205, 2015 |
| 6 |
Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors Kim JS, Joo MK, Piao MX, Ahn SE, Choi YH, Na J, Shin M, Han MJ, Jang HK, Kim GT Thin Solid Films, 558, 279, 2014 |
| 7 |
Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC Journal of Crystal Growth, 378, 92, 2013 |
| 8 |
Local rear contacts to silicon solar cells by in-line high-rate evaporation of aluminum Mader C, Muller J, Eidelloth S, Brendel R Solar Energy Materials and Solar Cells, 107, 272, 2012 |
| 9 |
Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs Song HJ, Roh CH, Choi HG, Ha MW, Hahn CK, Park JH, Lee JH Applied Surface Science, 257(18), 8102, 2011 |
| 10 |
Study of Arsenic ion implantation of patterned strained Si NWs Minamisawa RA, Habicht S, Knoll L, Zhao QT, Buca D, Mantl S, Kohler F, Carius R Solid-State Electronics, 60(1), 31, 2011 |