1 |
Comparison of microstructural and optoelectronic properties of NiO:Cu thin films deposited by ion-beam assisted rf sputtering in different gas atmospheres Wen CK, Xin YQ, Chen SC, Chuang TH, Chen PJ, Sun H Thin Solid Films, 677, 103, 2019 |
2 |
Preparation and characterization of copper thin film obtained by metal plasma immersion ion implantation and deposition dos Santos DJ, Ito NM, de Oliveira MCL, Tavares LB, Salvadori MC, Antunes RA Thin Solid Films, 649, 136, 2018 |
3 |
Influence of additives upon Cu thin film growth on atomic-layer-deposited Ru layer and trench-filling by direct electrodeposition Im B, Kim S, Kim SH Thin Solid Films, 636, 251, 2017 |
4 |
A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques Giroire B, Ahmad MA, Aubert G, Teule-Gay L, Michau D, Watkins JJ, Aymonier C, Poulon-Quintin A Thin Solid Films, 643, 53, 2017 |
5 |
Investigation of inhibiting properties of self-assembled films of 4-aminothiophenol on copper in 3.5% NaCl Rajkumar G, Sagunthala R, Sethuraman MG Journal of Adhesion Science and Technology, 29(11), 1107, 2015 |
6 |
Ionized vapor deposition of antimicrobial Ti-Cu films with controlled copper release Stranak V, Wulff H, Ksirova P, Zietz C, Drache S, Cada M, Hubicka Z, Bader R, Tichy M, Helm CA, Hippler R Thin Solid Films, 550, 389, 2014 |
7 |
Recovery of electrical resistance in copper films on polyethylene terephthalate subjected to a tensile strain Glushko O, Marx VM, Kirchlechner C, Zizak I, Cordill MJ Thin Solid Films, 552, 141, 2014 |
8 |
The diffusion doping of Cu crystals with 0.1 at.% In at high annealing temperatures for surface segregation measurements Madito MJ, Swart HC, Terblans JJ Thin Solid Films, 542, 186, 2013 |
9 |
Control of oxidation state of copper in flame deposited films Hadzifejzovic E, Elahi A, Caruana DJ Thin Solid Films, 520(16), 5254, 2012 |
10 |
Grain coarsening mechanism of Cu thin films by rapid annealing Sasajima Y, Kageyama J, Khoo K, Onuki J Thin Solid Films, 518(23), 6883, 2010 |