검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Characterization of 6.1 angstrom III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy Craig AP, Carrington PJ, Liu H, Marshall ARJ Journal of Crystal Growth, 435, 56, 2016 |
| No. | Article |
|---|---|
| 1 |
Characterization of 6.1 angstrom III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy Craig AP, Carrington PJ, Liu H, Marshall ARJ Journal of Crystal Growth, 435, 56, 2016 |