| 1 |
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
Creighton JR, Coltrin ME, Figiel JJ
Journal of Crystal Growth, 464, 132, 2017 |
| 2 |
Nanowire-Templated Lateral Epitaxilal Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire
Li QM, Lin Y, Creighton JR, Figiel JJ, Wang GT
Advanced Materials, 21(23), 2416, 2009 |
| 3 |
Chemical kinetics and mass transport effects in solution-based selective-area growth of ZnO nanorods
Coltrin ME, Hsu JWP, Scrymgeour DA, Creighton JR, Simmons NC, Matzke CM
Journal of Crystal Growth, 310(3), 584, 2008 |
| 4 |
Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH
Journal of Crystal Growth, 310(6), 1062, 2008 |
| 5 |
The role of collisions in the aligned growth of vertical nanowires
Li QM, Creighton JR, Wang GT
Journal of Crystal Growth, 310(16), 3706, 2008 |
| 6 |
Fundamental chemistry and modeling of group-III nitride MOVPE
Creighton JR, Wang GT, Coltrin ME
Journal of Crystal Growth, 298, 2, 2007 |
| 7 |
Modeling the parasitic chemical reactions of AlGaN organometallic vapor-phase epitaxy
Coltrin ME, Creighton JR, Mitchell CC
Journal of Crystal Growth, 287(2), 566, 2006 |
| 8 |
Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE
Creighton JR, Koleske DD, Mitchell CC
Journal of Crystal Growth, 287(2), 572, 2006 |
| 9 |
Complex formation of trimethylaluminum and trimethylgallium with ammonia: Evidence for a hydrogen-bonded adduct
Wang GT, Creighton JR
Journal of Physical Chemistry A, 110(3), 1094, 2006 |
| 10 |
Reversible adduct formation of trimethylgallium and trimethylindium with ammonia
Creighton JR, Wang GT
Journal of Physical Chemistry A, 109(1), 133, 2005 |
