화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
Zaknoune M, Cordier Y, Bollaert S, Ferre D, Theron D, Crosnier Y
Solid-State Electronics, 44(9), 1685, 2000
2 Nonselective wet chemical etching of GaAs and AlGaInP for device applications
Zaknoune M, Schuler O, Mollot F, Theron D, Crosnier Y
Journal of Vacuum Science & Technology B, 16(1), 223, 1998
3 Bromine/methanol wet chemical etching of via holes for InP microwave devices
Trassaert S, Boudart B, Piotrowicz S, Crosnier Y
Journal of Vacuum Science & Technology B, 16(2), 561, 1998
4 Gate recessing optimization of GaAs/Al0.22Ga0.78As heterojunction field effect transistor using citric acid hydrogen peroxide ammonium hydroxide for power applications
Hue X, Boudart B, Crosnier Y
Journal of Vacuum Science & Technology B, 16(5), 2675, 1998