| 1 |
Investigation of microstructure and properties of ultrathin graded ZrNx self-assembled diffusion barrier in deep nano-vias prepared by plasma ion immersion implantation
Zou JX, Liu B, Lin LW, Lu YF, Dong YM, Jiao GH, Ma F, Li QR
Applied Surface Science, 427, 950, 2018 |
| 2 |
Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition
Fang JS, Sun SL, Cheng YL, Chen GS, Chin TS
Applied Surface Science, 364, 358, 2016 |
| 3 |
A bilayer diffusion barrier of Ru/WSixNy for advanced Cu interconnects
Eom TK, Sari W, Cheon T, Kim SH, Kim WK
Thin Solid Films, 521, 73, 2012 |
| 4 |
Highly stable carbon-doped Cu films on barrierless Si
Zhang XY, Li XN, Nie LF, Chu JP, Wang Q, Lin CH, Dong C
Applied Surface Science, 257(8), 3636, 2011 |
| 5 |
Competition between dislocation nucleation and void formation as the stress relaxation mechanism in passivated Cu interconnects
Zhang J, Zhang JY, Liu G, Zhao Y, Sun J
Thin Solid Films, 517(9), 2936, 2009 |
| 6 |
X-ray metrology for advanced silicon processes
Wyon C, Gonchond JP, Delille D, Michallet A, Royer JC, Kwakman L, Marthon S
Applied Surface Science, 253(1), 21, 2006 |
| 7 |
Abnormal grain growth in electrochemically deposited Cu films
Militzer M, Freundlich P, Bizzotto D
Materials Science Forum, 467-470, 1339, 2004 |
| 8 |
Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
Ngwan VC, Zhu CX, Krishnamoorthy A
Thin Solid Films, 462-63, 321, 2004 |
| 9 |
Effect of surface treatment on electromigration in sub-micron Cu damascene interconnects
Vairagar AV, Mhaisalkar SG, Krishnamoorthy A
Thin Solid Films, 462-63, 325, 2004 |
| 10 |
Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper
Lin JH, Tsai YY, Chiu SY, Lee TL, Tsai CM, Chen PH, Lin CC, Feng MS, Kou CS, Shih HC
Thin Solid Films, 377-378, 592, 2000 |
