검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Lnfluence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions Faifer VN, Schroder DK, Current MI, Clarysse T, Timans PJ, Zangerle T, Vandervorst W, Wong TMH, Moussa A, Mccoy S, Gelpey J, Lerch W, Paul S, Bolze D, Halim J Journal of Vacuum Science & Technology B, 25(5), 1588, 2007 |
| 2 |
Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions Faifer VN, Current MI, Wong TMH, Souchkov VV Journal of Vacuum Science & Technology B, 24(1), 414, 2006 |
| 3 |
Boron damage profiles in crystalline and fluorine preamorphized silicon layers Ohno N, Hara T, Current MI Journal of the Electrochemical Society, 152(11), G835, 2005 |
| 4 |
Process integration issues for doping of ultrashallow junctions Current MI, Foad MA, Murrell AJ, Collart EJH, de Cock G, Jennings D Journal of Vacuum Science & Technology B, 18(1), 468, 2000 |
| 5 |
200 eV 10 keV boron implantation and rapid thermal annealing : Secondary ion mass spectroscopy and transmission electron microscopy study Current MI, Lopes D, Foad MA, England JG, Jones C, Su D Journal of Vacuum Science & Technology B, 16(1), 327, 1998 |
| 6 |
Ion-Implantation for Silicon Device Manufacturing - A Vacuum Perspective Current MI Journal of Vacuum Science & Technology A, 14(3), 1115, 1996 |
| 7 |
Review of Secondary-Ion Mass-Spectrometry Characterization of Contamination Associated with Ion-Implantation Stevie FA, Wilson RG, Simons DS, Current MI, Zalm PC Journal of Vacuum Science & Technology B, 12(4), 2263, 1994 |