화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Manjunath V, Reddy VR, Reddy PRS, Janardhanam V, Choi CJ
Current Applied Physics, 17(7), 980, 2017
2 Al-doped and in-doped ZnO thin films in heterojunctions with silicon
Chabane L, Zebbar N, Kechouane M, Aida MS, Trari M
Thin Solid Films, 605, 57, 2016
3 Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature
Reddy MSP, Kumar AA, Reddy VR
Thin Solid Films, 519(11), 3844, 2011
4 Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range
Demirezen S, Altindal S
Current Applied Physics, 10(4), 1188, 2010
5 Electrical characterization of novel Si solar cells
Tuzun O, Oktik S, Altindal S, Mammadov TS
Thin Solid Films, 511, 258, 2006