검색결과 : 5건
No. | Article |
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1 |
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer Manjunath V, Reddy VR, Reddy PRS, Janardhanam V, Choi CJ Current Applied Physics, 17(7), 980, 2017 |
2 |
Al-doped and in-doped ZnO thin films in heterojunctions with silicon Chabane L, Zebbar N, Kechouane M, Aida MS, Trari M Thin Solid Films, 605, 57, 2016 |
3 |
Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature Reddy MSP, Kumar AA, Reddy VR Thin Solid Films, 519(11), 3844, 2011 |
4 |
Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range Demirezen S, Altindal S Current Applied Physics, 10(4), 1188, 2010 |
5 |
Electrical characterization of novel Si solar cells Tuzun O, Oktik S, Altindal S, Mammadov TS Thin Solid Films, 511, 258, 2006 |