검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Huang Y, Ryou JH, Dupuis RD, D'Costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL Journal of Crystal Growth, 314(1), 92, 2011 |
| 2 |
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors D'Costa VR, Fang YY, Tolle J, Kouvetakis J, Menendez J Thin Solid Films, 518(9), 2531, 2010 |
| 3 |
Molecular approaches to p- and n-nanoscale doping of Ge1-ySny semiconductors: Structural, electrical and transport properties Xie JQ, Tolle J, D'Costa VR, Weng C, Chizmeshya AVG, Menendez J, Kouvetakis J Solid-State Electronics, 53(8), 816, 2009 |
| 4 |
Molecular-Based Synthetic Approach to New Group IV Materials for High-Efficiency, Low-Cost Solar Cells and Si-Based Optoelectronics Fang YY, Xie JQ, Tolle J, Roucka R, D'Costa VR, Chizmeshya AVG, Menendez J, Kouvetakis J Journal of the American Chemical Society, 130(47), 16095, 2008 |
| 5 |
Structural and optical properties of ZrB2 and HfxZr1-xB2 films grown by vicinal surface epitaxy on Si(111) substrates Roucka R, Ana YJ, Chizmeshya AVG, D'Costa VR, Tolle J, Menendez J, Kouvetakis J Solid-State Electronics, 52(11), 1687, 2008 |
| 6 |
Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100) Fang YY, D'Costa VR, Tolle J, Poweleit CD, Kouvetakis J, Menendez J Thin Solid Films, 516(23), 8327, 2008 |