| 1 |
Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications
Chromik S, Spankova M, Talacko M, Dobrocka E, Lalinsky T
Applied Surface Science, 461, 39, 2018 |
| 2 |
A general theory for the impedance response of dielectric films with a distribution of relaxation times
Cordoba-Torres P
Electrochimica Acta, 282, 892, 2018 |
| 3 |
Self-assembly and electrical characteristics of 4-pentynoic acid functionalized Fe3O4-gamma-Fe2O3 nanoparticles on SiO2/n-Si
Baharuddin AA, Ang BC, Wong YH
Applied Surface Science, 423, 236, 2017 |
| 4 |
A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
Zhou GD, Sun B, Zhou AK, Wu B, Huang HS
Current Applied Physics, 17(2), 235, 2017 |
| 5 |
Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices
Zhou GD, Wu B, Li ZL, Xiao ZJ, Li SH, Li P
Current Applied Physics, 15(3), 279, 2015 |
| 6 |
Characterization of electronic structure in dielectric materials by making use of the secondary electron emission
Uhm HS, Choi JH, Cho G, Park BJ, Jung RJ, Choi EH
Current Applied Physics, 13(2), 396, 2013 |
| 7 |
Enhanced dielectric and tunable characteristics of K-doped Ba0.5Sr0.5TiO3 thin films prepared by pulsed laser deposition
Sekhar KC, Hong KP, Key SH, Han CS, Kim JC, Kim DS, Park JC, Cho YS
Thin Solid Films, 527, 267, 2013 |
| 8 |
Synthesis, photoluminescence and charge storage characteristics of isolated silver nanocrystals embedded in Al2O3 gate dielectric
Luo XF, Yuan CL, Zhang ZR
Thin Solid Films, 516(21), 7675, 2008 |
| 9 |
Electrical properties of Al2O3-HfTiO laminate gate dielectric stacks with an equivalent oxide thickness below 0.8 nm
Mikhelashvili V, Eisenstein G
Thin Solid Films, 515(7-8), 3704, 2007 |
| 10 |
Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials
Tinoco JC, Estrada M, Baez H, Cerdeira A
Thin Solid Films, 496(2), 546, 2006 |
