검색결과 : 136건
No. | Article |
---|---|
1 |
Analysis on the temperature dependent electrical properties of graphene/Al-ZnO Schottky contact Li YP, Li YF, Zhang JH, Zou XY, Wang YS Current Applied Physics, 19(10), 1063, 2019 |
2 |
Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques Garris RL, Johnston S, Li JV, Guthrey HL, Ramanathan K, Mansfield LM Solar Energy Materials and Solar Cells, 174, 77, 2018 |
3 |
Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors Kaushik JK, Balakrishnan VR, Mongia D, Kumar U, Dayal S, Panwar BS, Muralidharan R Thin Solid Films, 612, 147, 2016 |
4 |
Correlation between electrical parameters and defect states of polythiophene:fullerene based solar cell Kaiser M, Nadazdy V, Siffalovic P, Ivanco J, Majkova E Thin Solid Films, 614, 16, 2016 |
5 |
Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery Liu G, Xu Y, Xu C, Basile A, Wang F, Dhar S, Conrad E, Mooney P, Gustafsson T, Feldman LC Applied Surface Science, 324, 30, 2015 |
6 |
Investigation of the effects of gamma radiation on the electrical properties of dilute GaAs1-xNx layers grown by Molecular Beam Epitaxy Al Saqri N, Felix JF, Aziz M, Jameel D, de Araujo CIL, Albalawi H, Al Mashary F, Alghamdi H, Taylor D, Henini M Current Applied Physics, 15(10), 1230, 2015 |
7 |
Properties of HfO2/ultrathin SiO2/Si structures and their comparison with Si MOS structures passivated in KCN solution Pincik E, Kobayashi H, Matsumoto T, Takahashi M, Mikula M, Brunner R Applied Surface Science, 301, 34, 2014 |
8 |
Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure Harmatha L, Stuchlikova L, Racko J, Marek J, Pechacek J, Benko P, Nemec M, Breza J Applied Surface Science, 312, 102, 2014 |
9 |
Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer Mikolasek M, Stuchlikova L, Harmatha L, Vincze A, Nemec M, Racko J, Breza J Applied Surface Science, 312, 152, 2014 |
10 |
Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer Yu TY, Pan FM, Chang CY, Hu T, Chen JF, Wang JF, Lin CL, Chen TH, Chen TM Current Applied Physics, 14(5), 659, 2014 |