| 1 |
Effective impurity gettering by phosphorus- and boron-diffused polysilicon passivating contacts for silicon solar cells
Liu AY, Yan D, Phang SP, Cuevas A, MacDonald D
Solar Energy Materials and Solar Cells, 179, 136, 2018 |
| 2 |
An optimized p-doped hole injection structure to improve the performance of organic light emitting diodes
Zhao W, Shi ZH, Cao H, Chen L, Qin DS
Thin Solid Films, 642, 333, 2017 |
| 3 |
p/n junction depth control using amorphous silicon as a low temperature dopant source
Lavareda G, Velozo AD, de Carvalho CN, Amaral A
Thin Solid Films, 543, 122, 2013 |
| 4 |
Susceptor-assisted microwave annealing for activation of arsenic dopants in silicon
Alford TL, Gadre MJ, Vemuri RNP, Theodore ND
Thin Solid Films, 520(13), 4314, 2012 |
| 5 |
Improvement of electrochemical properties of layered LiNi1/3Co1/3Mn1/3O2 positive electrode material by zirconium doping
Ding CX, Bai YC, Feng XY, Chen CH
Solid State Ionics, 189(1), 69, 2011 |
| 6 |
Comparison of implantation and diffusion behavior of Ti, Sb and N in ion-implanted single crystal and polycrystalline ZnO: A SIMS study
Lee J, Metson J, Evans PJ, Pal U, Bhattacharyya D
Applied Surface Science, 256(7), 2143, 2010 |
| 7 |
Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration
Canneaux T, Mathiot D, Ponpon JP, Leroy Y
Thin Solid Films, 518(9), 2394, 2010 |
| 8 |
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs
Bazizi EM, Pakfar A, Fazzini PF, Cristiano F, Tavernier C, Claverie A, Zographos N, Zechner C, Scheid E
Thin Solid Films, 518(9), 2427, 2010 |
| 9 |
Numerical study on the dopant concentration and refractive index profile evolution in an optical fiber manufacturing process
Yan Y, Pitchumani R
International Journal of Heat and Mass Transfer, 49(13-14), 2097, 2006 |
| 10 |
Ab initio study of dopant ifiterstitials in 4H-SiC
Mattausch A, Bockstedte M, Pankratov O
Materials Science Forum, 483, 523, 2005 |
