| 1 |
Effect of the strong electron correlation on the spin-resolved electronic structure of the doped crystals Si < B, Fe>, Si < B, Co > and Si < B, Ni>
Syrotyuk SV, Khoverko YM, Shcherban NO, Druzhinin AA
Molecular Crystals and Liquid Crystals, 700(1), 1, 2020 |
| 2 |
Effect of the strong electron correlation on the spin-resolved electronic structure of the doped crystals Si < B, Fe>, Si < B, Co > and Si < B, Ni>
Syrotyuk SV, Khoverko YM, Shcherban NO, Druzhinin AA
Molecular Crystals and Liquid Crystals, 700(1), 1, 2020 |
| 3 |
Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (100) by X-ray photoelectron spectroscopy
Lee M, Kim S, Ko DH
Applied Surface Science, 443, 131, 2018 |
| 4 |
The spin-resolved electronic structure of doped crystals si < Ni > and Si < B, Ni>: theoretical and experimental aspects
Syrotyuk SV, Khoverko YM, Shcherban NO, Druzhinin AA
Molecular Crystals and Liquid Crystals, 674(1), 120, 2018 |
| 5 |
Comparative study of the effects of phosphorus and boron doping in vapor-liquid-solid growth with fixed flow of silicon gas
Islam MS, Mehedi IM
Journal of Crystal Growth, 440, 55, 2016 |
| 6 |
Synthesis of boron-doped Si particles by ball milling and application in Li-ion batteries
Rousselot S, Gauthier M, Mazouzi D, Lestriez B, Guyomard D, Roue L
Journal of Power Sources, 202, 262, 2012 |
| 7 |
Film properties of nitrogen-doped polycrystalline silicon for advanced gate material
Woo SH, Kim YW, Um PY, Lee HM, Kim CK
Korean Journal of Chemical Engineering, 26(3), 824, 2009 |
| 8 |
Annealing induced phosphorus protrusion into thin-oxide films from heavily phosphorus-doped silicon (100)
Sano Y, Ying WB, Kamiura Y, Mizokawa Y
Thin Solid Films, 516(8), 1788, 2008 |
| 9 |
Epitaxial growth of N delta doped Si films on Si(100) by alternately supplied NH3 and SiH4
Jeong YC, Sakuraba M, Murota J
Applied Surface Science, 224(1-4), 197, 2004 |
| 10 |
Fabrication of Er-doped Si nanocrystallites without thermal quenching of 1.5 mu m photoluminescence
Li CQ, Kondo K, Makimura T, Murakami K
Applied Surface Science, 197, 607, 2002 |
