검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F International Journal of Hydrogen Energy, 37(18), 13783, 2012 |
| 2 |
Proton irradiation effects on AlN/GaN high electron mobility transistors Lo CF, Chang CY, Chu BH, Kim HY, Kim J, Cullen DA, Zhou L, Smith DJ, Pearton SJ, Dabiran A, Cui B, Chow PP, Jang S, Ren F Journal of Vacuum Science & Technology B, 28(5), L47, 2010 |
| 3 |
Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes Anderson TJ, Wang HT, Kang BS, Ren F, Pearton SJ, Osinsky A, Dabiran A, Chow PP Applied Surface Science, 255(5), 2524, 2008 |
| 4 |
Selective detection of Hg (II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP Electrochemical and Solid State Letters, 10(11), J150, 2007 |
| 5 |
Neutron irradiation effects in p-GaN Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Pearton SJ, Dabiran A, Osinsky AV Journal of Vacuum Science & Technology B, 24(5), 2256, 2006 |
| 6 |
Electron trapping effects in C- and Fe-doped GaN and AlGaN Lopatiuk O, Osinsky A, Dabiran A, Gartsman K, Feldman I, Chernyak L Solid-State Electronics, 49(10), 1662, 2005 |
| 7 |
Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1-xN Burdett W, Osinsky A, Kotlyarov V, Chow P, Dabiran A, Chernyak L Solid-State Electronics, 47(5), 931, 2003 |
| 8 |
Influence of layer doping and thickness on predicted performance of NPNAlGaN/GaN HBTs Lee KP, Dabiran A, Chow PP, Pearton SJ, Ren F Solid-State Electronics, 47(6), 969, 2003 |
| 9 |
RF performance of GaN-based npn bipolar transistors Lee KP, Dabiran A, Osinsky A, Chow PP, Pearton SJ, Ren F Solid-State Electronics, 47(9), 1501, 2003 |