검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Challenges and first results of SiC Schottky diode manufacturing using a 3 inch technology Treu M, Rupp R, Brunner H, Dahlquist F, Hecht C Materials Science Forum, 457-460, 981, 2004 |
| 2 |
A JBS diode with controlled forward temperature coefficient and surge current capability Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 389-3, 1129, 2002 |
| 3 |
High-power SiC diodes: Characteristics, reliability and relation to material defects Lendenmann H, Dahlquist F, Bergman JP, Bleichner H, Hallin C Materials Science Forum, 389-3, 1259, 2002 |
| 4 |
Degradation in SiC bipolar devices: Sources and consequences of electrically active dislocations in SiC Lendenmann H, Bergman JP, Dahlquist F, Hallin C Materials Science Forum, 433-4, 901, 2002 |
| 5 |
A high performance JBS rectifier - design considerations Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 353-356, 683, 2001 |
| 6 |
Long term operation of 4.5kV PiN and 2.5kV JBS diodes Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson PA, Bergman JP, Skytt P Materials Science Forum, 353-356, 727, 2001 |
| 7 |
A 2.8kV, forward drop JBS diode with low leakage Dahlquist F, Svedberg JO, Zetterling CM, Ostling M, Breitholtz B, Lendenmann H Materials Science Forum, 338-3, 1179, 2000 |