검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Optical properties of InxGa1-xN/GaN quantum-disks obtained by selective area sublimation Damilano B, Vezian VS, Portail M, Alloing B, Brault J, Courville A, Brandli BV, Leroux M, Massies J Journal of Crystal Growth, 477, 262, 2017 |
| 2 |
GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source Cordier Y, Damilano B, Aing P, Chaix C, Linez F, Tuomisto F, Vennegues P, Frayssinet E, Lefebvre D, Portail M, Nemoz M Journal of Crystal Growth, 433, 165, 2016 |
| 3 |
Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B Journal of Crystal Growth, 434, 25, 2016 |
| 4 |
AIN interlayer to improve the epitaxial growth of SmN on GaN (0001) Vezian S, Damilano B, Natali E, Al Khalfioui M, Massies J Journal of Crystal Growth, 450, 22, 2016 |
| 5 |
Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films Natali F, Vezian S, Granville S, Damilano B, Trodahl HJ, Anton EM, Warring H, Semond F, Cordier Y, Chong SV, Ruck BJ Journal of Crystal Growth, 404, 146, 2014 |
| 6 |
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes Brault J, Damilano B, Kahouli A, Chenot S, Leroux M, Vinter B, Massies J Journal of Crystal Growth, 363, 282, 2013 |
| 7 |
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A Journal of Crystal Growth, 338(1), 20, 2012 |
| 8 |
Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F Journal of Crystal Growth, 312(19), 2683, 2010 |
| 9 |
Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses Moshe O, Rich DH, Damilano B, Massies J Journal of Vacuum Science & Technology B, 28(4), C5E25, 2010 |
| 10 |
Surface morphology of AlN and size dispersion of GaN quantum dots Matsuse A, Grandjean N, Damilano B, Massies J Journal of Crystal Growth, 274(3-4), 387, 2005 |