검색결과 : 20건
No. | Article |
---|---|
1 |
Growth Mechanism of SiC CVD: Surface Etching by H-2, H Atoms, and HCl Sukkaew P, Danielsson O, Ojamae L Journal of Physical Chemistry A, 122(9), 2503, 2018 |
2 |
On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide Yazdanfar M, Pedersen H, Sukkaew P, Ivanov IG, Danielsson O, Kordina O, Janzen E Journal of Crystal Growth, 390, 24, 2014 |
3 |
Wave energy potential in the Baltic Sea and the Danish part of the North Sea, with reflections on the Skagerrak Henfridsson U, Neimane V, Strand K, Kapper R, Bernhoff H, Danielsson O, Leijon M, Sundberg J, Thorburn K, Ericsson E, Bergman K Renewable Energy, 32(12), 2069, 2007 |
4 |
Study of a longitudinal flux permanent magnet linear generator for wave energy converters Danielsson O, Eriksson M, Leijon M International Journal of Energy Research, 30(14), 1130, 2006 |
5 |
An electrical approach to wave energy conversion Leijon M, Danielsson O, Eriksson M, Thorburn K, Bernhoff H, Isberg J, Sundberg J, Ivanova I, Sjostedt E, Agren O, Karlsson KE, Wolfbrandt A Renewable Energy, 31(9), 1309, 2006 |
6 |
Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes Pons M, Blanquet E, Dedulle JM, Ucar M, Wellmann P, Danielsson O, Ferret P, Di Cioccio L, Baillet F, Chaussende D, Madar R Materials Science Forum, 483, 3, 2005 |
7 |
SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q Materials Science Forum, 483, 61, 2005 |
8 |
Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition Danielsson O, Forsberg U, Janzen E Journal of Crystal Growth, 250(3-4), 471, 2003 |
9 |
Reducing stress in silicon carbide epitaxial layers Danielsson O, Hallin C, Janzen E Journal of Crystal Growth, 252(1-3), 289, 2003 |
10 |
Using N-2 as precursor gas in III-nitride CVD growth Danielsson O, Janzen E Journal of Crystal Growth, 253(1-4), 26, 2003 |