| 1 |
Correlation between etch pits formed by molten KOH+Na2O2 etching and dislocation types in heavily doped n(+)-4H-SiC studied by X-ray topography
Yao YZ, Ishikawa Y, Sugawara Y, Sato K, Danno K, Suzuki H, Bessho T, Yamaguchi S, Nishikawa K
Journal of Crystal Growth, 364, 7, 2013 |
| 2 |
Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)
Hori T, Danno K, Kimoto T
Journal of Crystal Growth, 308(2), 430, 2007 |
| 3 |
Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition
Hori T, Danno K, Kimoto T
Journal of Crystal Growth, 306(2), 297, 2007 |
| 4 |
Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition
Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H
Journal of Crystal Growth, 281(2-4), 370, 2005 |
| 5 |
Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS
Danno K, Kimoto T, Matsunami H
Materials Science Forum, 483, 355, 2005 |
| 6 |
High-speed growth of high-purity epitaxial layers with specular surface on 4H-SiC(000-1) face
Danno K, Kimoto T, Matsunami H
Materials Science Forum, 457-460, 197, 2004 |
| 7 |
Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition
Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H
Materials Science Forum, 457-460, 205, 2004 |
| 8 |
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface
Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H
Applied Surface Science, 216(1-4), 497, 2003 |
| 9 |
Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes
Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H
Materials Science Forum, 433-4, 197, 2002 |
