화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
Cacciato A, Breuil L, Dekker H, Zahid M, Kar GS, Everaert JL, Schoofs G, Shi X, Van den Bosch G, Jurczak M, Debusschere I, Van Houdt J, Cockburn A, Date L, Xa LQ, Le M, Lee W
Electrochemical and Solid State Letters, 14(7), H271, 2011
2 Development of ALD HfZrOx with TDEAH/TDEAZ and H2O
Shi X, Tielens H, Takeoka S, Nakabayashi T, Nyns L, Adelmann C, Delabie A, Schram T, Ragnarsson L, Schaekers M, Date L, Schreutelkamp R, Van Elshocht S
Journal of the Electrochemical Society, 158(1), H69, 2011
3 Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
Van Elshocht S, Caymax M, De Gendt S, Conard T, Petry J, Date L, Pique D, Heyns MM
Journal of the Electrochemical Society, 151(4), F77, 2004
4 Bulk properties of MOCVD-deposited HfO2 layers fair high k dielectric applications
Van Elshocht S, Baklanov M, Brijs B, Carter R, Caymax M, Carbonell L, Claes M, Conard T, Cosnier V, Date L, De Gendt S, Kluth J, Pique D, Richard O, Vanhaeren D, Vereecke G, Witters T, Zhao C, Heyns M
Journal of the Electrochemical Society, 151(10), F228, 2004