화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Evolution of 3C-SiC islands nucleated from a liquid phase on Si face alpha-SiC substrates
Kim-Hak O, Ferro G, Lorenzzi J, Carole D, Dazord J, Chaudouet P, Chaussende D, Miele P
Thin Solid Films, 518(15), 4234, 2010
2 Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate
Kim-Hak O, Ferro G, Dazord J, Marinova M, Lorenzzi J, Polychroniadis E, Chaudouet P, Chaussende D, Miele P
Journal of Crystal Growth, 311(8), 2385, 2009
3 Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy
Rodriguez P, Auvray L, Favier A, Dazord J, Montell Y
Thin Solid Films, 516(23), 8424, 2008
4 Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE
Rodriguez P, Auvray L, Dumont H, Dazord J, Monteil Y
Journal of Crystal Growth, 298, 81, 2007
5 Comparative studies of (0001) 4H-SiC layers grown with either Silane or HexaMethylDiSilane Propane precursor systems.
Sartel C, Balloud C, Souliere V, Juillaguet S, Dazord J, Monteil Y, Camassel J, Rushworth S
Materials Science Forum, 457-460, 217, 2004
6 Potential of HMDS/C3H8 precursor system for the growth of state of the art heteroepitaxial 3C-SiC layers on Si(100)
Ferro G, Camassel J, Juillaguet S, Balloud C, Polychroniadis EK, Stoimenos Y, Seigle-Ferrand P, Dazord J, Monteil Y, Rushworth SA, Smith LM
Materials Science Forum, 457-460, 281, 2004
7 Enhancement of atomic ordering in In-0.Ga-53(0).As-47/InP: a comparison between trimethylarsenic and arsine
Dumont H, Auvray L, Dazord J, Monteil Y, Marty O, Pitaval M
Thin Solid Films, 458(1-2), 154, 2004
8 Nature effect of the gas during high temperature treatments of 4H-SiC substrates
Younes G, Ferro G, Jacquier C, Dazord J, Monteil Y
Applied Surface Science, 207(1-4), 200, 2003
9 N-enrichment at the GaAs1-xNx/GaAs(001) interface: microstructure and optical properties
Dumont H, Auvray L, Dazord J, Monteil Y, Bondoux C, Patriarche G
Journal of Crystal Growth, 248, 441, 2003
10 Growth and characterization of high quality BxGa1-xAs/GaAs(001) epilayers
Dumont H, Dazord J, Monteil Y, Alexandre F, Goldstein L
Journal of Crystal Growth, 248, 463, 2003