화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Studying the effect of temperature on the copper oxidation process using hydrogen peroxide for use in multi-step chemical mechanical planarization models
DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A
Thin Solid Films, 518(14), 3903, 2010
2 A three-step copper chemical mechanical planarization model including the dissolution effects of a commercial slurry
DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A
Thin Solid Films, 518(14), 3910, 2010
3 Analysis of pads with slanted grooves for copper CMP
Rosales-Yeomans D, DeNardis D, Borucki L, Suzuki T, Philipossian A
Journal of the Electrochemical Society, 155(10), H750, 2008
4 Design and evaluation of pad grooves for copper CMP
Rosales-Yeomans D, DeNardis D, Borucki L, Philipossian A
Journal of the Electrochemical Society, 155(10), H797, 2008
5 Evaluation of pad groove designs under reduced slurry flow rate conditions during copper CMP
Rosales-Yeomans D, DeNardis D, Borucki L, Suzuki T, Sampurno Y, Philipossian A
Journal of the Electrochemical Society, 155(10), H812, 2008
6 Modeling copper CMP removal rate dependency on wafer pressure, velocity, and dissolved oxygen concentration
DeNardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A
Journal of the Electrochemical Society, 153(5), G428, 2006
7 Characterization of copper-hydrogen peroxide film growth kinetics
DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A
Thin Solid Films, 513(1-2), 311, 2006
8 Impact of gaseous additives on copper CMP in neutral and alkaline solutions using a CAP system
DeNardis D, Doi T, Hiskey B, Ichikawa K, Ichikawa D, Philipossian A
Journal of the Electrochemical Society, 152(11), G824, 2005
9 Arrhenius characterization of ILD and copper CMP processes
Sorooshian J, DeNardis D, Charns L, Li Z, Shadman F, Boning D, Hetherington D, Philipossiana A
Journal of the Electrochemical Society, 151(2), G85, 2004