화학공학소재연구정보센터
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No. Article
1 Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
Wu TL, Marcon D, Ronchi N, Bakeroot B, You SZ, Stoffels S, Van Hove M, Bisi D, Meneghini M, Groeseneken G, Decoutere S
Solid-State Electronics, 103, 127, 2015
2 Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation
Marino FA, Bisi D, Meneghini M, Verzellesi G, Zanoni E, Van Hove M, You S, Decoutere S, Marcon D, Stoffels S, Ronchi N, Meneghesso G
Solid-State Electronics, 113, 9, 2015
3 Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition
You SZ, Decoutere S, Nguyen ND, Van Huylenbroeck S, Sibaja-Hernandez A, Venegas R, Loo R, De Meyer K
Thin Solid Films, 520(8), 3345, 2012
4 Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs
You SZ, Decoutere S, Sibaja-Hernandez A, Venegas R, Van Huylenbroeck S, De Meyer K
Solid-State Electronics, 61(1), 81, 2011
5 Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration
Sibaja-Hernandez A, You SZ, Van Huylenbroeck S, Venegas R, De Meyer K, Decoutere S
Solid-State Electronics, 65-66, 72, 2011
6 Improvement of PECVD Silicon-Germanium Crystallization for CMOS Compatible MEMS Applications
Guo B, Severi S, Bryce G, Claes G, Van Hoof R, Du Bois B, Haspeslagh L, Witvrouw A, Decoutere S
Journal of the Electrochemical Society, 157(2), D103, 2010
7 Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
Torres-Torres R, Venegas R, Decoutere S
Solid-State Electronics, 54(3), 235, 2010
8 Optimization of external poly base sheet resistance in 0.13 mu m quasi self-aligned SiGe:C HBTs
You S, Van Huylenbroeck S, Nguyen ND, Sibaja-Hernandez A, Venegas R, Van Wichelen K, Decoutere S, De Meyer K
Thin Solid Films, 518, S68, 2010
9 Analytical extraction of small and large signal models for FinFET varactors
Crupi G, Schreurs DMMP, Dehan M, Xiao D, Caddemi A, Mercha A, Decoutere S
Solid-State Electronics, 52(5), 704, 2008
10 Impact of line width roughness on the matching performances of next-generation devices
Gustin C, Leunissen LHA, Mercha A, Decoutere S, Lorusso G
Thin Solid Films, 516(11), 3690, 2008