| 1 |
The optimization of deep trench isolation structure for high voltage devices on SOI substrate
Qian QS, Sun WF, Han DX, Liu SY, Su Z, Shi LX
Solid-State Electronics, 63(1), 154, 2011 |
| 2 |
Temperature dependence of the sticking coefficient in atomic layer deposition
Rose M, Bartha JW, Endler I
Applied Surface Science, 256(12), 3778, 2010 |
| 3 |
TEM characterization of ALD layers in deep trenches using a dedicated FIB lamellae preparation method
Gluch J, Rossler T, Schmidt D, Menzel SB, Albert M, Eckert J
Thin Solid Films, 518(16), 4553, 2010 |
| 4 |
Method to determine the sticking coefficient of precursor molecules in atomic layer deposition
Rose M, Bartha JW
Applied Surface Science, 255(13-14), 6620, 2009 |
| 5 |
Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations
Nigrin S, Armstrong GA, Kranti A
Solid-State Electronics, 51(9), 1221, 2007 |
| 6 |
Breakdown and hot carrier injection in deep trench isolation structures
Elattari B, Coppens P, Van den Bosch G, Moens P, Groeseneken G
Solid-State Electronics, 49(8), 1370, 2005 |
| 7 |
A scalable substrate network for compact modelling of deep trench insulated HBT
Fregonese S, Celi D, Zimmer T, Maneux C, Sulima PY
Solid-State Electronics, 49(10), 1623, 2005 |
| 8 |
The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
Hua WC, Yang TY, Liu CW
Applied Surface Science, 224(1-4), 425, 2004 |
