화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The optimization of deep trench isolation structure for high voltage devices on SOI substrate
Qian QS, Sun WF, Han DX, Liu SY, Su Z, Shi LX
Solid-State Electronics, 63(1), 154, 2011
2 Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations
Nigrin S, Armstrong GA, Kranti A
Solid-State Electronics, 51(9), 1221, 2007
3 Breakdown and hot carrier injection in deep trench isolation structures
Elattari B, Coppens P, Van den Bosch G, Moens P, Groeseneken G
Solid-State Electronics, 49(8), 1370, 2005
4 The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier
Hua WC, Yang TY, Liu CW
Applied Surface Science, 224(1-4), 425, 2004