검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Reduction of morphological defects in 4H-SiC epitaxial layers Li Y, Zhao ZF, Yu L, Wang Y, Zhou P, Niu YX, Li ZH, Chen YF, Han P Journal of Crystal Growth, 506, 108, 2019 |
| 2 |
Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching Wellmann PJ, Sakwe SA, Oehlschlager F, Hoffmann V, Zeimer U, Knauer A Journal of Crystal Growth, 310(5), 955, 2008 |
| 3 |
MBE growth of low-defect Si layers highly doped with Sb Werner J, Oehme M, Kirfel O, Lyutovich K, Kasper E Thin Solid Films, 517(1), 227, 2008 |
| 4 |
Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates Yamamoto M, Teraji T, Ito T Journal of Crystal Growth, 285(1-2), 130, 2005 |
| 5 |
Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy Zhuang D, Edgar JH, Strojek B, Chaudhuri J, Rek Z Journal of Crystal Growth, 262(1-4), 89, 2004 |