검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS Journal of Crystal Growth, 483, 134, 2018 |
| 2 |
N-doped Al2O3 thin films deposited by atomic layer deposition Kim M, Kang KM, Wang Y, Park HH Thin Solid Films, 660, 657, 2018 |
| 3 |
Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy Woo S, Kim M, So B, Yoo G, Jang J, Lee K, Nam O Journal of Crystal Growth, 407, 6, 2014 |
| 4 |
Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer Zan HW, Yeh CC, Meng HF, Tsai CC, Chen LH Advanced Materials, 24(26), 3509, 2012 |
| 5 |
Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition Yoo G, Park H, Lee D, Lim H, Lee S, Kong B, Cho H, Park H, Lee H, Nam O Current Applied Physics, 11(4), S90, 2011 |
| 6 |
Approach for dislocation free GaN epitaxy Hite JK, Mastro MA, Eddy CR Journal of Crystal Growth, 312(21), 3143, 2010 |
| 7 |
Progress in fabrication processing of thin film transistors Yoshioka K, Sameshima T, Sano N Solid-State Electronics, 52(3), 359, 2008 |
| 8 |
Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) Imer B, Wu F, Speck JS, DenBaars SP Journal of Crystal Growth, 306(2), 330, 2007 |
| 9 |
Defect reduction in SiC crystals grown by the modified Lely method Anikin MM, Pons M, Pernot E, Madar R Materials Science Forum, 433-4, 83, 2002 |
| 10 |
Heteroepitaxy of Gap on Si(100) Bachmann KJ, Rossow U, Sukidi N, Castleberry H, Dietz N Journal of Vacuum Science & Technology B, 14(4), 3019, 1996 |