검색결과 : 9건
No. | Article |
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1 |
Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster Quinci T, Kuyyalil J, Thanh TN, Wang YP, Almosni S, Letoublon A, Rohel T, Tavernier K, Chevalier N, Dehaese O, Boudet N, Berar JF, Loualiche S, Even J, Bertru N, Le Corre A, Durand O, Cornet C Journal of Crystal Growth, 380, 157, 2013 |
2 |
X-ray study of antiphase domains and their stability in MBE grown GaP on Si Letoublon A, Guo W, Cornet C, Boulle A, Veron M, Bondi A, Durand O, Rohel T, Dehaese O, Chevalier N, Bertru N, Le Corre A Journal of Crystal Growth, 323(1), 409, 2011 |
3 |
Critical thickness for InAs quantum dot formation on (311)B InP substrates Caroff P, Bertru N, Lu W, Elias G, Dehaese O, Leoublon A, Le Corre A Journal of Crystal Growth, 311(9), 2626, 2009 |
4 |
Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited Alghoraibi I, Rohel T, Bertru N, Le Corre A, Letoublon A, Caroff P, Dehaese O, Loualiche S Journal of Crystal Growth, 293(2), 263, 2006 |
5 |
Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates Caroff P, Bertru N, Platz C, Dehaese O, Le Corre A, Loualiche S Journal of Crystal Growth, 273(3-4), 357, 2005 |
6 |
Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mu m on InP(311)B substrates Caroff P, Platz C, Dehaese O, Paranthoen C, Bertru N, Le Corre A, Loualiche S Journal of Crystal Growth, 278(1-4), 329, 2005 |
7 |
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 mu m quantum dot laser Paranthoen C, Platz C, Moreau G, Bertru N, Dehaese O, Le Corre A, Miska P, Even J, Folliot H, Labbe C, Patriarche G, Simon JC, Loualiche S Journal of Crystal Growth, 251(1-4), 230, 2003 |
8 |
Formation of InAs islands on InP(311)B surface by molecular beam epitaxy Paranthoen C, Bertru N, Platz C, Caroff P, Dehaese O, Folliot H, Le Corre A, Loualiche S Journal of Crystal Growth, 257(1-2), 104, 2003 |
9 |
Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates Frechengues S, Bertru N, Drouot V, Paranthoen C, Dehaese O, Loualiche S, Le Corre A, Lambert B Journal of Crystal Growth, 209(4), 661, 2000 |