검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection Nallatamby JC, Abdelhadi K, Jacquet JC, Prigent M, Floriot D, Delage S, Obregon J Solid-State Electronics, 81, 35, 2013 |
| 2 |
Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Cico K, Gregusova D, Kuzmik J, Jurkovic M, Alexewicz A, Poisson MAD, Pogany D, Strasser G, Delage S, Frohlich K Solid-State Electronics, 67(1), 74, 2012 |
| 3 |
GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S Journal of Crystal Growth, 310(23), 5232, 2008 |
| 4 |
Synthesis of 13H-benzo[6,7]- and 13H-benzo[4,5]indolo[3,2-c]quinolines : A new series of potent specific ligands for triplex DNA Nguyen CH, Marchand C, Delage S, Sun JS, Garestier T, Helene C, Bisagni E Journal of the American Chemical Society, 120(11), 2501, 1998 |