검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E Solid-State Electronics, 113, 15, 2015 |
| 2 |
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C Journal of Crystal Growth, 272(1-4), 305, 2004 |
| 3 |
Thermal characterisation of AlGaN/GaN HEMTs using micro-Raman scattering spectroscopy and pulsed I-V measurements Aubry R, Jacquet JC, Dua C, Gerard H, Dessertenne B, di Forte-Poisson MA, Cordier Y, Delage SL Materials Science Forum, 457-460, 1625, 2004 |
| 4 |
MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances Cordier Y, Semond F, Lorenzini P, Grandjean N, Natali F, Damilano B, Massies J, Hoel V, Minko A, Vellas N, Gaquiere C, DeJaeger JC, Dessertene B, Cassette S, Surrugue M, Adam D, Grattepain JC, Aubry R, Delage SL Journal of Crystal Growth, 251(1-4), 811, 2003 |