화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Photo-Cross-Linked Diblock Copolymer Micelles: Quantitative Study of Photochemical Efficiency, Micelles Morphologies and their Thermal Behavior
Le D, Lienafa L, Phan TNT, Deleruyelle D, Bouchet R, Maria S, Bertin D, Gigmes D
Macromolecules, 47(7), 2420, 2014
2 Ge2Sb2Te5 layer used as solid electrolyte in conductive-bridge memory devices fabricated on flexible substrate
Deleruyelle D, Putero M, Ouled-Khachroum T, Bocquet M, Coulet MV, Boddaert X, Calmes C, Muller C
Solid-State Electronics, 79, 159, 2013
3 Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up
Hraziia, Makosiej A, Palma G, Portal JM, Bocquet M, Thomas O, Clermidy F, Reyboz M, Onkaraiah S, Muller C, Deleruyelle D, Vladimirescu A, Amara A, Anghel C
Solid-State Electronics, 90, 99, 2013
4 Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer
Muller C, Deleruyelle D, Muller R, Thomas M, Demolliens A, Turquat C, Spiga S
Solid-State Electronics, 56(1), 168, 2011
5 Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010) Foreword
Deleruyelle D, Iannaccone G
Solid-State Electronics, 58(1), 1, 2011
6 Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes
Dumas C, Deleruyelle D, Demolliens A, Muller C, Spiga S, Cianci E, Fanciulli M, Tortorelli I, Bez R
Thin Solid Films, 519(11), 3798, 2011
7 Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures
Demolliens A, Muller C, Mueller R, Turquat C, Goux L, Deleruyelle D, Wouters DJ
Journal of Crystal Growth, 312(22), 3267, 2010
8 On the electrostatic behavior of floating nanoconductors
Deleruyelle D, Micolau G
Solid-State Electronics, 52(1), 17, 2008
9 Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
Deleruyelle D, Molas G, DeSalvo B, Gely M, Lafond D
Solid-State Electronics, 49(11), 1728, 2005
10 Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
Deleruyelle D, Cluzel J, De Salvo B, Fraboulet D, Mariolle D, Buffet N, Deleonibus S
Solid-State Electronics, 47(10), 1641, 2003