검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs Vandooren A, Leonelli D, Rooyackers R, Hikavyy A, Devriendt K, Demand M, Loo R, Groeseneken G, Huyghebaert C Solid-State Electronics, 83, 50, 2013 |
| 2 |
Temperature and RF Current Sensor Wafers for Plasma Etching Milenin AP, Demand M, Boullart W, Arleo P Journal of the Electrochemical Society, 159(1), H5, 2012 |
| 3 |
Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S Solid-State Electronics, 52(9), 1303, 2008 |
| 4 |
Profile control of novel non-Si gates using BCl3/N-2 plasma Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W Journal of Vacuum Science & Technology B, 25(3), 739, 2007 |