검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation Cheng K, Degroote S, Leys M, Medjdoub F, Derluyn J, Sijmus B, Germain M, Borghs G Journal of Crystal Growth, 315(1), 204, 2011 |
| 2 |
Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs Xiao DP, Schreurs D, De Raedt W, Derluyn J, Germain M, Nauwelaers B, Borghs G Solid-State Electronics, 53(2), 185, 2009 |
| 3 |
Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer Lieten RR, Degroote S, Leys M, Derluyn J, Kuijk M, Borghs G Journal of Crystal Growth, 310(6), 1132, 2008 |
| 4 |
Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates Leys M, Cheng K, Derluyn J, Degroote S, Germain M, Borghs G, Taylor CA, Dawson P Journal of Crystal Growth, 310(23), 4888, 2008 |
| 5 |
AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4 Cheng K, Leys M, Derluyn J, Degroote S, Xiao DP, Lorenz A, Boeykens S, Germain M, Borghs G Journal of Crystal Growth, 298, 822, 2007 |
| 6 |
Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors Derluyn J, Dessein K, Flamand G, Mols Y, Poortmans J, Borghs G, Moerman I Journal of Crystal Growth, 247(3-4), 237, 2003 |