화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Orthopositronium annihilation and emission in mesostructured thin silica and silicalite-1 films
Liszkay L, Barthe MF, Corbel C, Crivelli P, Desgardin P, Etienne M, Ohdaira T, Perez P, Suzuki R, Valtchev V, Walcarius A
Applied Surface Science, 255(1), 187, 2008
2 Modifications of He implantation induced cavities in silicon by MeV silicon implantation
Desgardin P, Barthe MF, Ntsoenzok E, Liu CL
Applied Surface Science, 252(9), 3231, 2006
3 Vacancy defects induced in sintered polished UO2 disks by helium implantation
Labrim H, Barthe MF, Desgardin P, Sauvage T, Blondiaux G, Corbel C, Piron JP
Applied Surface Science, 252(9), 3256, 2006
4 Thermal evolution of vacancy defects induced in sintered UO2 disks by helium implantation
Labrim H, Barthe MF, Desgardin P, Sauvage T, Blondiaux G, Corbel C, Piron JP
Applied Surface Science, 252(9), 3262, 2006
5 Near surface vacancy defects in sintered polished UO2 disks
Barthe MF, Guilbert S, Labrim H, Desgardin P, Sauvage T, Blondiaux G, Carlot G, Garcia P, Piron JP
Materials Science Forum, 445-6, 48, 2004
6 Visualization and position control of a slow positron beam
Desgardin P, Barthe MF
Materials Science Forum, 445-6, 468, 2004
7 Characterization of 3C-SiC monocrystals using positron annihilation spectroscopy
Kerbiriou X, Gredde A, Barthe MF, Desgardin P, Blondiaux G
Materials Science Forum, 457-460, 825, 2004
8 Shallow traps and positron dynamics in epitaxial silicon carbide
Britton DT, Barthe MF, Corbel C, Desgardin P, Egger W, Sperr P, Kogel G, Triftshauser W
Applied Surface Science, 194(1-4), 122, 2002
9 Strain relaxation induced by He-implantation at the Si1-xGex/Si(100) interface investigated by positron annihilation
Liszkay L, Kajcsos Z, Barthe MF, Desgardin P, Hackbarth T, Herzog HJ, Hollander B, Mantl S
Applied Surface Science, 194(1-4), 136, 2002
10 Structural modification in electron-irradiated polyetherurethane
Desgardin P, Barthe MF, Blondiaux G, Oudot B, Ravat B, Grivet M, Liszkay L
Applied Surface Science, 194(1-4), 195, 2002