검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Determination of film and surface recombination in thin-film SOI devices using gated-diode technique Rudenko T, Rudenko A, Kilchytska V, Cristoloveanu S, Ernst T, Colinge JP, Dessard V, Flandre D Solid-State Electronics, 48(3), 389, 2004 |
| 2 |
Composite ULP diode fabrication, modelling and applications in multi-V-th FD SOICMOS technology Levacq D, Liber C, Dessard V, Flandre D Solid-State Electronics, 48(6), 1017, 2004 |
| 3 |
0.25 mu m fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Vanmackelberg M, Raynaud C, Faynot O, Pelloie JL, Tabone C, Grouillet A, Martin F, Dambrine G, Picheta L, Mackowiak E, Llinares P, Sevenhans J, Compagne E, Fletcher G, Flandre D, Dessard V, Vanhoenacker D, Raskin JP Solid-State Electronics, 46(3), 379, 2002 |
| 4 |
Fully depleted SOICMOS technology for heterogeneous micropower, high-temperature or RF microsystems Flandre D, Adriaensen S, Akheyar A, Crahay A, Demeus L, Delatte P, Dessard V, Iniguez B, Neve A, Katschmarskyj B, Loumaye P, Laconte J, Martinez I, Picun G, Rauly E, Renaux C, Spote D, Zitout M, Dehan M, Parvais B, Simon P, Vanhoenacker D, Raskin JP Solid-State Electronics, 45(4), 541, 2001 |
| 5 |
An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics Pavanello MA, Martino JA, Dessard V, Flandre D Electrochemical and Solid State Letters, 3(1), 50, 2000 |
| 6 |
Analog performance and application of graded-channel fully depleted SOI MOSFETs Pavanello MA, Martino JA, Dessard V, Flandre D Solid-State Electronics, 44(7), 1219, 2000 |