검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Selective epitaxial growth of Ge(110) in trenches using the aspect ratio trapping technique Destefanis V, Hartmann JM, Baud L, Delaye V, Billon T Journal of Crystal Growth, 312(7), 918, 2010 |
| 2 |
Thin-film devices for low power applications Monfra S, Fenouillet-Beranger C, Bidal G, Boeuf F, Denorme S, Huguenin JL, Samson MP, Loubet N, Hartmann JM, Campidelli Y, Destefanis V, Arvet C, Benotmane K, Clement L, Faynot O, Skotnicki T Solid-State Electronics, 54(2), 90, 2010 |
| 3 |
Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111) Destefanis V, Hartmann JM, Abbadie A, Papon AM, Billon T Journal of Crystal Growth, 311(4), 1070, 2009 |
| 4 |
In situ HCl etching of Si for the elaboration of locally misorientated surfaces Destefanis V, Morand Y, Hartmann JM, Rouchon D, Barbe JC, Mermoux M Applied Surface Science, 254(5), 1436, 2007 |