검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Strain control of GaN grown on Si substrates using an AlGaN interlayer Deura M, Nakahara T, Momose T, Nakano Y, Sugiyama M, Shimogaki Y Journal of Crystal Growth, 514, 65, 2019 |
| 2 |
Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family Yonenaga I, Deura M, Tokumoto Y, Kutsukake K, Ohno Y Journal of Crystal Growth, 500, 23, 2018 |
| 3 |
Formation of SiC layer by carbonization of Si surface using CO gas Deura M, Fukuyama H Journal of Crystal Growth, 434, 77, 2016 |
| 4 |
The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys Han SS, Panyakeow S, Ratanathammaphan S, Higo A, Wang YP, Deura M, Sugiyama M, Nakano Y Canadian Journal of Chemical Engineering, 90(4), 915, 2012 |
| 5 |
740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE Ohkawa K, Watanabe T, Sakamoto M, Iiirako A, Deura M Journal of Crystal Growth, 343(1), 13, 2012 |
| 6 |
Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si Kondo Y, Deura M, Terada Y, Hoshii T, Takenaka M, Takagi S, Nakano Y, Sugiyama M Journal of Crystal Growth, 312(8), 1348, 2010 |
| 7 |
Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE Deura M, Kondo Y, Takenaka M, Takagi S, Nakano Y, Sugiyama M Journal of Crystal Growth, 312(8), 1353, 2010 |
| 8 |
In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells Wang YP, Onitsuka R, Deura M, Yu W, Sugiyama M, Nakano Y Journal of Crystal Growth, 312(8), 1364, 2010 |
| 9 |
Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS Deura M, Shimogaki Y, Nakano Y, Sugiyama M Journal of Crystal Growth, 310(23), 4736, 2008 |
| 10 |
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si Deura M, Hoshii T, Takenaka M, Takagi S, Nakano Y, Sugiyama M Journal of Crystal Growth, 310(23), 4768, 2008 |