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| No. | Article |
|---|---|
| 1 |
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters Vennegues P, Diaby BS, Kim-Chauveau H, Bodiou L, Schenk HPD, Frayssinet E, Martin RW, Watson IM Journal of Crystal Growth, 353(1), 108, 2012 |