| 1 |
Light-induced negative differential resistance effect in a resistive switching memory device
Wang XJ, Wang YY, Feng M, Wang KY, Bai PB, Tian YM
Current Applied Physics, 20(3), 371, 2020 |
| 2 |
Back-to-back Interface diodes induced symmetrical negative differential resistance and reversible bipolar resistive switching in beta-CuSCN trigonal pyramid micro/nanoarray
Chen WL, Zhao J, Liu B, Cheng BC, Xiao YH, Lei SJ
Applied Surface Science, 480, 13, 2019 |
| 3 |
Spin induced inverter circuit with trinuclear chromium complexes
Amutha S, Sen A
Applied Surface Science, 493, 331, 2019 |
| 4 |
Resistive switching functional quantum-dot light-emitting diodes
Park YR, Choi WK, Hong YJ
Current Applied Physics, 19(2), 102, 2019 |
| 5 |
Charge transfer mechanisms underlying Contact Glow Discharge Electrolysis
Yerokhin A, Mukaeva VR, Parfenov EV, Laugel N, Matthews A
Electrochimica Acta, 312, 441, 2019 |
| 6 |
Graphdiyne nanoribbon based diodes: A theoretical study on rectifying behavior of nitrogen doped graphdiyne-graphdiyne heterojunction
Nazirfakhr M, Zaminpayma E
Applied Surface Science, 458, 210, 2018 |
| 7 |
OPE molecular junction as a hydrogen gas sensor
Xin JG, Yang CL, Wang MS, Ma XG
Current Applied Physics, 18(3), 273, 2018 |
| 8 |
Negative differential resistance and steady state multiplicity in solid oxide fuel cells
Sands JD, Wongyao N
Journal of Electroanalytical Chemistry, 812, 59, 2018 |
| 9 |
Qualitative dependence of the electro-oxidation behavior of sulfite on solution pH
Bell JG, Dao M, Wang JC
Journal of Electroanalytical Chemistry, 816, 1, 2018 |
| 10 |
Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles
Abhinav EM, Chandrasekaran G, Raja SVK
Applied Surface Science, 418, 308, 2017 |
