화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001)
Dimakis E, Tsagaraki K, Iliopoulos E, Komninou P, Kehagias T, Delimitis A, Georgakilas A
Journal of Crystal Growth, 278(1-4), 367, 2005
2 Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth
Iliopoulos E, Adikimenakis A, Dimakis E, Tsagaraki K, Konstantinidis G, Georgakilas A
Journal of Crystal Growth, 278(1-4), 426, 2005
3 Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
Dimakis E, Georgakilas A, Androulidaki M, Tsagaraki K, Kittler G, Kalaitzakis F, Cengher D, Bellet-Amalric E, Jalabert D, Pelekanos NT
Journal of Crystal Growth, 251(1-4), 476, 2003