검색결과 : 20건
No. | Article |
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1 |
Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo2C heterostructures over liquid catalyst Chaitoglou S, Tsipas P, Speliotis T, Kordas G, Vavouliotis A, Dimoulas A Journal of Crystal Growth, 495, 46, 2018 |
2 |
AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(111) and electronic structure characterization Kordatos A, Kelaidis N, Giamini SA, Marquez-Velasco J, Xenogiannopoulou E, Tsipas P, Kordas G, Dimoulas A Applied Surface Science, 369, 251, 2016 |
3 |
Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature Giamini SA, Marquez-Velasco J, Sakellis I, Tsipas P, Kelaidis N, Tsoutsou D, Boukos N, Kantarelou V, Xenogiannopoulou E, Speliotis T, Aretouli K, Kordas G, Dimoulas A Applied Surface Science, 385, 554, 2016 |
4 |
Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets Preface Molle A, Dimoulas A, Le Lay G, Lemme M Applied Surface Science, 291, 1, 2014 |
5 |
Silicene on metal substrates: A first-principles study on the emergence of a hierarchy of honeycomb structures Kaltsas D, Tsetseris L, Dimoulas A Applied Surface Science, 291, 93, 2014 |
6 |
Inorganic-organic core-shell titania nanoparticles for efficient visible light activated photocatalysis Moustakas NG, Kontos AG, Likodimos V, Katsaros F, Boukos N, Tsoutsou D, Dimoulas A, Romanos GE, Dionysiou DD, Falaras P Applied Catalysis B: Environmental, 130, 14, 2013 |
7 |
Room temperature analysis of Ge p(+)/n diodes reverse characteristics fabricated by platinum assisted dopant activation Ioannou-Sougleridis V, Poulakis N, Dimitrakis P, Normand P, Patsis GP, Dimoulas A, Simoen E Solid-State Electronics, 81, 19, 2013 |
8 |
Selected Papers from the ESSDERC 2009 Conference Foreword Dimoulas A, Tsoukalas D Solid-State Electronics, 54(9), 809, 2010 |
9 |
SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A, Mavrou G, Galata S Solid-State Electronics, 54(9), 979, 2010 |
10 |
Structural and electrical properties of HfO2/Dy2O3 gate stacks on Ge substrates Evangelou EK, Rahman MS, Androulidakis II, Dimoulas A, Mavrou G, Giannakopoulos KP, Anagnostopoulos DF, Valicu R, Borchert GL Thin Solid Films, 518(14), 3964, 2010 |