| 1 |
GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off
Mu FW, Morino Y, Jerchel K, Fujino M, Suga T
Applied Surface Science, 416, 1007, 2017 |
| 2 |
Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation
Predan F, Reinwand D, Klinger V, Dimroth F
Applied Surface Science, 353, 1203, 2015 |
| 3 |
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire
Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Teherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A
Journal of Crystal Growth, 370, 63, 2013 |
| 4 |
Characterization of bonding structures of directly bonded hybrid crystal orientation substrates
Toyoda E, Sakai A, Nakatsuka O, Isogai H, Senda T, Izunome K, Ogawa M, Zaima S
Thin Solid Films, 517(1), 323, 2008 |
| 5 |
High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications
Singh R, Radu I, Reiche M, Himcinschi C, Kuck B, Tillack B, Gosele U, Christiansen SH
Applied Surface Science, 253(7), 3595, 2007 |
| 6 |
Ge layer transfer to Si for photovoltaic applications
Zahler JM, Ahn CG, Zaghi S, Atwater HA, Chu C, Iles P
Thin Solid Films, 403-404, 558, 2002 |
| 7 |
Application of linear annealing method to Si vertical bar vertical bar SiO2/Si wafer direct bonding
Lee JW, Kang CS, Song OS, Kim CK
Thin Solid Films, 394(1-2), 272, 2001 |
