검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Effect of nitrogen doping on the formation of planar defects in 4H-SiC Siche D, Albrecht M, Doerschel J, Irmscher K, Rost RJ, Rossberg M, Schulz D Materials Science Forum, 483, 39, 2005 |
| 2 |
Structural improvement of seeds for bulk crystal growth by using hot-wall CVD of 4H-SiC Wagner A, Schulz D, Doerschel J Materials Science Forum, 483, 109, 2005 |
| 3 |
Phase separation in oxide-borate mixed systems Klimm D, Bertram R, Ganschow S, Doerschel J Journal of Chemical and Engineering Data, 48(1), 120, 2003 |
| 4 |
Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport Rost HJ, Doerschel J, Irmscher K, Schulz D, Siche D Journal of Crystal Growth, 257(1-2), 75, 2003 |
| 5 |
Evolution of domain walls in 6H-and 4H-SiC single crystals Siche D, Rost HJ, Doerschel J, Schulz D, Wollweber J Journal of Crystal Growth, 237, 1187, 2002 |
| 6 |
On mass transport and surface morphology of sublimation grown 4H silicon carbide Schulz D, Doerschel J, Lechner M, Rost HJ, Siche D, Wollweber J Journal of Crystal Growth, 246(1-2), 31, 2002 |
| 7 |
Phase separation during the melting of oxide borates LnCa(4)O(BO3)(3) (Ln = Y, Gd) Klimm D, Ganschow S, Bertram R, Doerschel J, Bermudez V, Klos A Materials Research Bulletin, 37(10), 1737, 2002 |
| 8 |
Macrodefect generation in SiC single crystals caused by polytype changes Rost HJ, Doerschel J, Schulz D, Siche D, Wollweber J Materials Science Forum, 389-3, 67, 2002 |
| 9 |
Properties of nitrogen-doped 4H-SiC single crystals grown by physical vapour transport Rost HJ, Irmscher K, Doerschel J, Siche D, Schulz D, Wollweber J Materials Science Forum, 433-4, 91, 2002 |
| 10 |
Morphological features of sublimation-grown 4H-SiC layers Schulz D, Doerschel J Materials Science Forum, 433-4, 95, 2002 |