검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials Tellekamp MB, Shank JC, Doolittle WA Journal of Crystal Growth, 463, 156, 2017 |
| 2 |
A review of the synthesis of reduced defect density InxGa1-xN for all indium compositions Clinton EA, Vadiee E, Fabien CAM, Moseley MW, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA Solid-State Electronics, 136, 3, 2017 |
| 3 |
The crystallization and properties of sputter deposited lithium niobite Shank JC, Tellekamp MB, Doolittle WA Thin Solid Films, 609, 6, 2016 |
| 4 |
Low-temperature growth of InGaN films over the entire composition range by MBE Fabien CAM, Gunning BP, Doolittle WA, Fischer AM, Wei YO, Xie HG, Ponce FA Journal of Crystal Growth, 425, 115, 2015 |
| 5 |
Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry Tellekamp MB, Greenlee JD, Shank JC, Doolittle WA Journal of Crystal Growth, 425, 225, 2015 |
| 6 |
Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells Fabien CAM, Doolittle WA Solar Energy Materials and Solar Cells, 130, 354, 2014 |
| 7 |
A versatile metal-halide vapor chemistry for the epitaxial growth of metallic, insulating and semiconducting films Henderson WE, Calley WL, Carver AG, Chen H, Doolittle WA Journal of Crystal Growth, 324(1), 134, 2011 |
| 8 |
Growth kinetics of AlxGa1-xN grown via ammonia-based metal-organic molecular beam epitaxy Billingsley D, Henderson W, Pritchett D, Doolittle WA Journal of Crystal Growth, 312(2), 209, 2010 |
| 9 |
Growth and characterization of AlxGa1-xN via NH3-based metal-organic molecular beam epitaxy Billingsley D, Henderson W, Pritchett D, Doolittle WA Journal of Crystal Growth, 311(5), 1328, 2009 |
| 10 |
The origin of the residual conductivity of GaN films on ferroelectric materials Lee KK, Cai ZH, Ziemer K, Doolittle WA Journal of Crystal Growth, 311(16), 4001, 2009 |