화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
Rojas-Ramirez JS, Wang S, Contreras-Guerrero R, Caro M, Bhatnagar K, Holland M, Oxland R, Doornbos G, Passlack M, Diaz CH, Droopad R
Journal of Crystal Growth, 425, 33, 2015
2 Growth of heterostructures on InAs for high mobility device applications
Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R
Journal of Crystal Growth, 378, 117, 2013
3 Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
Duffy R, Curatola G, Pawlak BJ, Doornbos G, van der Tak K, Breimer P, van Berkum JGM, Roozeboom F
Journal of Vacuum Science & Technology B, 26(1), 402, 2008
4 Origin of high critical currents in YBa2Cu3O7-delta superconducting thin films
Dam B, Huijbregtse JM, Klaassen FC, van der Geest RCF, Doornbos G, Rector JH, Testa AM, Freisem S, Martinez JC, Stauble-Pumpin B, Griessen R
Nature, 399(6735), 439, 1999