화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W
Journal of Crystal Growth, 464, 2, 2017
2 In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Barrigon E, Bruckner S, Supplie O, Doscher H, Rey-Stolle I, Hannappel T
Journal of Crystal Growth, 370, 173, 2013
3 Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment
Doscher H, Bruckner S, Dobrich A, Hohn C, Kleinschmidt P, Hannappel T
Journal of Crystal Growth, 315(1), 10, 2011
4 Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy
Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K
Journal of Crystal Growth, 315(1), 16, 2011
5 GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient
Doscher H, Moller K, Hannappel T
Journal of Crystal Growth, 318(1), 372, 2011
6 Investigation of oxide removal from Si(1 0 0) substrates in dependence of the MOVPE process gas ambient
Doscher H, Bruckner S, Hannappel T
Journal of Crystal Growth, 318(1), 563, 2011
7 Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment
Doscher H, Kleinschmidt P, Hannappel T
Applied Surface Science, 257(2), 574, 2010
8 Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates
Doscher H, Lilienkamp G, Iskra P, Kazempoor M, Daum W
Journal of Vacuum Science & Technology B, 28(4), C5B5, 2010
9 In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)
Doscher H, Kunert B, Beyer A, Supplie O, Volz K, Stolz W, Hannappel T
Journal of Vacuum Science & Technology B, 28(4), C5H1, 2010