검색결과 : 9건
No. | Article |
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1 |
GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W Journal of Crystal Growth, 464, 2, 2017 |
2 |
In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient Barrigon E, Bruckner S, Supplie O, Doscher H, Rey-Stolle I, Hannappel T Journal of Crystal Growth, 370, 173, 2013 |
3 |
Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment Doscher H, Bruckner S, Dobrich A, Hohn C, Kleinschmidt P, Hannappel T Journal of Crystal Growth, 315(1), 10, 2011 |
4 |
Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy Doscher H, Supplie O, Bruckner S, Hannappel T, Beyer A, Ohlmann J, Volz K Journal of Crystal Growth, 315(1), 16, 2011 |
5 |
GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient Doscher H, Moller K, Hannappel T Journal of Crystal Growth, 318(1), 372, 2011 |
6 |
Investigation of oxide removal from Si(1 0 0) substrates in dependence of the MOVPE process gas ambient Doscher H, Bruckner S, Hannappel T Journal of Crystal Growth, 318(1), 563, 2011 |
7 |
Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment Doscher H, Kleinschmidt P, Hannappel T Applied Surface Science, 257(2), 574, 2010 |
8 |
Thermal stability of thin ZrO2 films prepared by a sol-gel process on Si(001) substrates Doscher H, Lilienkamp G, Iskra P, Kazempoor M, Daum W Journal of Vacuum Science & Technology B, 28(4), C5B5, 2010 |
9 |
In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100) Doscher H, Kunert B, Beyer A, Supplie O, Volz K, Stolz W, Hannappel T Journal of Vacuum Science & Technology B, 28(4), C5H1, 2010 |