| 1 |
Influence of hetero-gate dielectrics on short-channel effects in scaled tunnel field-effect transistors
Chien ND, Vinh LT, Tham HTH, Shih CH
Current Applied Physics, 20(12), 1342, 2020 |
| 2 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions
Bae MS, Yun I
Solid-State Electronics, 156, 48, 2019 |
| 3 |
Characterization and modeling of 28-nm FDSOI CMOS technology down to cryogenic temperatures
Beckers A, Jazaeri F, Bohuslayskyi H, Hutin L, De Franceschi S, Enz C
Solid-State Electronics, 159, 106, 2019 |
| 4 |
Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation
Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
Solid-State Electronics, 141, 31, 2018 |
| 5 |
Enhanced transconductance in a double-gate graphene field-effect transistor
Hwang BW, Yeom HI, Kim D, Kim CK, Lee D, Choi YK
Solid-State Electronics, 141, 65, 2018 |
| 6 |
Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles
Abhinav EM, Chandrasekaran G, Raja SVK
Applied Surface Science, 418, 308, 2017 |
| 7 |
A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects
Raksharam, Dutta AK
Solid-State Electronics, 130, 33, 2017 |
| 8 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017 |
| 9 |
Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region
Shin YH, Yun I
Solid-State Electronics, 120, 19, 2016 |
| 10 |
Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method
Shin YH, Yun I
Solid-State Electronics, 126, 136, 2016 |
