| 1 |
An in-depth Monte Carlo study of low-field mobility in ultra-thin body DGMOSFETs for modeling purposes
Roldan JB, Jimenez-Molinos F, Balaguer M, Gamiz F
Solid-State Electronics, 79, 92, 2013 |
| 2 |
A unified analytical continuous current model applicable to accumulation mode (junctionless) and inversion mode MOSFETs with symmetric and asymmetric double-gate structures
Jin XS, Liu X, Wu ML, Chuai RY, Lee JH, Lee JH
Solid-State Electronics, 79, 206, 2013 |
| 3 |
A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure
Jin X, Liu X, Kwon HI, Lee JH, Lee JH
Solid-State Electronics, 82, 77, 2013 |
| 4 |
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Jazaeri F, Barbut L, Koukab A, Sallese JM
Solid-State Electronics, 82, 103, 2013 |
| 5 |
Explicit model for the gate tunneling current in double-gate MOSFETs
Chaves F, Jimenez D, Sune J
Solid-State Electronics, 68, 93, 2012 |
| 6 |
Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack
Chaves F, Jimenez D, Sune J
Solid-State Electronics, 76, 19, 2012 |
| 7 |
An analytical compact model for Schottky-barrier double gate MOSFETs
Balaguer M, Iniguez B, Roldan JB
Solid-State Electronics, 64(1), 78, 2011 |
| 8 |
Compact capacitance modeling of a 3-terminal FET at zero drain-source voltage
Iniguez B, Moldovan O
Solid-State Electronics, 54(5), 520, 2010 |
| 9 |
Explicit quantum potential and charge model for double-gate MOSFETs
Chaves F, Jimenez D, Sune J
Solid-State Electronics, 54(5), 530, 2010 |
| 10 |
Multiband simulation of quantum transport in nanoscale double-gate MOSFETs
Iwata H, Matsuda T, Ohzone T
Solid-State Electronics, 53(10), 1130, 2009 |
