검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
GaN/NbN epitaxial semiconductor/superconductor heterostructures Yan RS, Khalsa G, Vishwanath S, An YH, Wright J, Ouvimov SR, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D Nature, 555(7695), 183, 2018 |
| 2 |
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ Solid-State Electronics, 136, 30, 2017 |
| 3 |
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ Journal of Crystal Growth, 456, 121, 2016 |
| 4 |
Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN Storm DF, McConkie T, Katzer DS, Downey BP, Hardy MT, Meyer DJ, Smith DJ Journal of Crystal Growth, 409, 14, 2015 |
| 5 |
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ Journal of Crystal Growth, 425, 119, 2015 |
| 6 |
Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS-HEMTs Downey BP, Meyer DJ, Katzer DS, Marron TM, Pan M, Gao X Solid-State Electronics, 106, 12, 2015 |
| 7 |
Electrical characterization of Schottky contacts to N-polar GaN Downey BP, Meyer DJ, Katzer DS, Storm DF, Binari SC Solid-State Electronics, 86, 17, 2013 |